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 Ordering number : ENN8147
2SK3820
2SK3820
Features
* * * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 26 104 1.65 50 150 --55 to +150 84.5 26 Unit V V A A W W C C mJ A
Note : *1 VDD=20V, L=200H, IAV=26A *2 L200H, single pulse
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS= 16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=13A ID=13A, VGS=10V ID=13A, VGS=4V Ratings min 100 1 10 1.2 11 19 45 56 60 80 2.6 typ max Unit V
A A
V S m m
Marking : K3820
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61005QA MS IM TB-00000899 No.8147-1/4
2SK3820
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A VDS=50V, VGS=10V, ID=26A IS=26A, VGS=0V Ratings min typ 2150 160 110 20 34 185 62 44 7.8 9.8 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions unit : mm 7513-002
10.2 4.5
Package Dimensions unit : mm 7001-003
10.2 0.2
1.3
4.5 1.3
0.2
9.9
1.5MAX
11.5
8.8
8.8
1.6
20.9
3.0
1.2
1
0.8
2
3
1.2 0 to 0.3 0.4 2.7
(9.4)
11.0
0.8
0.4
2.55
2.55
1
2
3
1 : Gate 2 : Drain 3 : Source
2.55
1.35
1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD
2.7
2.55
2.55
2.55
SANYO : SMP
Switching Time Test Circuit
VIN 10V 0V VIN ID=13A RL=3.85 VDD=50V
Unclamped Inductive Test Circuit
50 RG
L
D
PW=10s D.C.1%
VOUT
15V 0V 50 2SK3820 VDD
G
2SK3820 P.G 50
S
1.4
No.8147-2/4
2SK3820
40
ID -- VDS
V
Tc=25C
40
ID -- VGS
25C
5C
10
35
35 30 25 20 15
Drain Current, ID -- A
25 20 15 10
Drain Current, ID -- A
30
Tc= 7
VGS=3V
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain-to-Source Voltage, VDS -- V
120
IT07855 130 120
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
25
5
5
C
--25
C
10
IT07856
RDS(on) -- Tc
ID=13A
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
110 100 90 80 70 60 50 40
110 100 90 80 70 60 50 40 30 20 10
Tc=75C
=1 ID
3
VG A,
4 S=
V
25C
--25C
13 I D=
VG A,
10 S=
V
30 20 2 3 4 5 6 7 8 9 10 IT07857
0 --50
--25
0
25
50
75
100
125
25 75C C
150 IT07858 1.5 IT07860 30 IT07862
6V
4V
VDS=10V
8V
Gate-to-Source Voltage, VGS -- V
7
yfs -- ID
Case Temperature, Tc -- C
100 7 5 3 2
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
5 3
VDS=10V
10 7 5 3 2 1.0 7 5 0.1
C 25
C 5 --2 = C Tc 75
Source Current, IS -- A
2
10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.3
2
3
5
7 1.0
2
3
5
7 10
2
3
5
Tc=7 5C 25C --25C
0.6
0.9
Drain Current, ID -- A
5 3
IT07859 5
SW Time -- ID
td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
VDD=50V VGS=10V Ciss, Coss, Crss -- pF
3 2
Switching Time, SW Time -- ns
2
100 7 5 3 2
1000 7 5 3 2
tf
tr
td(on)
Coss
Crss
100 10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 5 0 5 10 15 20 25
Drain Current, ID -- A
IT07861
Drain-to-Source Voltage, VDS -- V
Tc= -1.2
No.8147-3/4
2SK3820
10 9
VGS -- Qg
VDS=50V ID=26A
Drain Current, ID -- A
2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
ASO
IDP=104A
10
10 s
Gate-to-Source Voltage, VGS -- V
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50
ID=26A
10
1m
m DC 0 s ms op era tio n 10
0 s
s
Operation in this area is limited by RDS(on).
0.1 0.1
Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Total Gate Charge, Qg -- nC
2.0
IT07863 60
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain to Source Voltage, VDS -- V
IT07864
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65 1.5
50
40
1.0
30
20
0.5
10
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT07811
Case Temperature, Tc -- C
IT07822
Note on usage : Since the 2SK3820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8147-4/4


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